 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| geometry process details principal device types cmlt2222a cmlt2207 cmlm2205 cmkt2207 gross die per 4 inch wafer 41,699 process CP191V small signal transistor npn - amp/switch transistor chip process epitaxial planar die size 16.5 x 16.5 mils die thickness 7.1 mils base bonding pad area 3.5 x 4.3 mils emitter bonding pad area 3.5 x 4.3 mils top side metalization al - 30,000? back side metalization au-as - 13,000? www.centralsemi.com r1 (22-march 2010)
process CP191V typical electrical characteristics www.centralsemi.com r1 (22-march 2010) |
Price & Availability of CP191V
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |